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Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 667 p., 2Conference Proceedings

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 647 p., 1Conference Proceedings

A novel approach to the analysis of sub-bandgap absorption in a-Si:H based materialsCHEN, I.-S; JIAO, L; COLLINS, R. W et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 391-394, issn 0022-3093, 1Conference Paper

Amorphization from the quenched high-pressure phase in tetrahedrally-bonded materialsTSUJI, K; KATAYAMA, Y; KANDA, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 24-27, issn 0022-3093, 1Conference Paper

Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot techniqueVIEIRA, M; FANTONI, A; KOYNOV, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1193-1197, issn 0022-3093, 2Conference Paper

Amorphous silicon p-i-n diodes, deposited by the VHF-GD process : new experimental resultsCHABLOZ, P; KEPPNER, H; FISCHER, D et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1159-1162, issn 0022-3093, 2Conference Paper

Cathodic and anodic glow discharge silicon-carbon alloys (a-Si_1-xC_x:H) from x = 0.5 to 1 : A comparative study by photoemission (UPS) and photoluminescence (PL)ALVAREZ, F; ROVIRA, P. I; BORMIOLI, M et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 628-631, issn 0022-3093, 2Conference Paper

Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopyFAMELI, G; DELLA SALA, D; ROCA, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 69-72, issn 0022-3093, 1Conference Paper

Charge carrier transport in diluted hopping systemsARKHIPOV, V. I; BÄSSLER, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 242-245, issn 0022-3093, 1Conference Paper

Debye to non-Debye relaxation in As-Te-Se glassesTITUS, S. S. K; SKAURAGI, H; HAYASHI, K et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 556-558, issn 0022-3093, 1Conference Paper

Defect metastability associated with oxygen and nitrogen impurity atoms in hydrogenated amorphous silicon filmsLUCOVSKY, G; JING, Z.Journal of non-crystalline solids. 1996, Vol 198200, pp 342-346, issn 0022-3093, 1Conference Paper

Defects in magnetron-sputtered a-Ge_1-xN_x:HMIN, H; UEDA, S; ISHII, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 375-378, issn 0022-3093, 1Conference Paper

Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layersLONGEAUD, C; KLEIDER, J. P.Journal of non-crystalline solids. 1996, Vol 198200, pp 355-358, issn 0022-3093, 1Conference Paper

Deposition of microcrystalline hydrogenated silicon, germanium alloy (μc-Si_xGe_1-x:H) films by reactive magnetron sputtering (RMS)CHO, S. M; CHRISTENSEN, C; LUCOVSKY, G et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 587-591, issn 0022-3093, 1Conference Paper

Detection of optical non-linarities in amorphous semiconductors by caustic crossing in an intensity-modulated laser beamTIHKHOMIROV, V. K; LIEVENS, P; QUAMHIEH, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 119-123, issn 0022-3093, 1Conference Paper

Determination of the density of states in amorphous silicon-carbon alloys using a Fourier transformation of transient photocurrent dataBAYLEY, P. A; MARSHALL, J. M; MAIN, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 161-164, issn 0022-3093, 1Conference Paper

Distribution of charged defects in a:Si-H n-i Schottky barrier solar cellsLIU, H; SEMOUSHKINA, S; WRONSKI, C. R et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1168-1171, issn 0022-3093, 2Conference Paper

Dual beam and transient infrared stimulated photoconductivity in hydrogenated amorphous silicon at 4.2 KFRITZSCHE, H; HECK, S; STRADINS, P et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 153-156, issn 0022-3093, 1Conference Paper

Electric field concentration at electrode edge with decreasing amorphous silicon defect densityIHARA, H; OBA, E; IIDA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 326-329, issn 0022-3093, 1Conference Paper

Excitation spectroscopy of photoinduced absorption in amorphous siliconMALINOVSKY, I; HAJIEV, F; UGUR, S et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 98-102, issn 0022-3093, 1Conference Paper

Following directly the effect of the various deep states on the phototransport properties of a-Si:HLUBIANIKER, Y; BALBERG, I; FEFER, E et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 309-312, issn 0022-3093, 1Conference Paper

Ge nanocrystals with a sharp size distribution : A detailed study of the crystallization of a-Si_1-xO_xGe_y alloy filmsZACHARIAS, M; BLÄSING, J; CHRISTEN, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 919-922, issn 0022-3093, 2Conference Paper